High Conductivity Silicon Carbide Substrates

Period of Performance: 04/06/1993 - 04/06/1995

$800K

Phase 2 SBIR

Recipient Firm

Advanced Technology Materials, Inc.
Danbury, CT 06810
Principal Investigator

Abstract

Preeminence in wide bandgap semiconductor materials technology is critical for the United States to reassert leadership in nextgeneration power semiconductor and short wave length optoelectronics. Unfortunately, the quality and short wave length optoelectronics. Unfortunately, the quality and availability of substrates - the basis of any semiconductor technolkogy - has not kept pace with either techincal or commercial requirements. In a uniquely successful Phase I, ATM explored the growth of highly doped SiC single crystals using both open and closed crucible sublimation growth techniques. We also identified and demonstrated a novel sublimation method that will reduce defect densities and permit controlled doping of high quality SiC single crystals. In Phase II, we will optimize the desigfn and process parameters for the production of highly n- and p-doped substrated for LED and discrete power applications. A fundamental SiC technology leap will be achieved by correlating growth conditions with the occurence and subsequent elimination of specific defect structures. In Phase III ATM will scale the crystal growth process to enable the manufacture of specific devices and to supply substrates in order to accelerate the growth of an SiC based semiconductor industry.