Inorganic Conformal Coatings for SiC Packaging

Period of Performance: 06/30/1997 - 06/30/1999


Phase 2 SBIR

Recipient Firm

Tpl, Inc.
3921 Academy Parkway North, NE
Albuquerque, NM 87109
Principal Investigator

Research Topics


Silicon-based microelectronic devices cannot operate at high temperatures, in high radiation, and at high frequency due to their small bandgap. Wide-bandgap semicon-ductors are needed and are being investigated for applications in these extreme environments. Silicon carbide is quickly becoming the wide-bandgap semiconductor of choice, but it's successful implementation into electronics requires ancillary tech-nologies. The most important of these technologies is coatings for sealing and insulating. TPL proposes to continue the development of a low-application-temperature, hermetic coating for use with silicon carbide. Phase I results indicate that the coating has no surface accessible porosity and should have thermal expansion similar to that of silicon carbide. The Phase II program will develop the coating system for use with silicon carbide-based devices. The composition will be varied on the molecular level to provide tailored properties for the applications. Compatibility with the devices and hermeticity will ultimately be evaluated in test circuits. TPL has successfully completed the objectives of the Phase I program and has networked itself with experts in silicon carbide manufacturing, microelectronic packaging, and precision coatings to carry out the successful Phase II program.