High-Efficiency Extremely High-Frequency (EHF) Power Amplifiers

Period of Performance: 05/05/2006 - 02/05/2007

$100K

Phase 1 SBIR

Recipient Firm

Innosys
2900 South Main Street Array
Salt Lake City, UT 84115
Principal Investigator

Abstract

InnoSys intends to demonstrate improved performance EHF power amplifiers using 3-D microfabrication techniques and technologies that are rugged and can be produced in large quantities at low cost. Per the specifications of this SBIR solicitation, the power output of these 3-D power amplifiers will be > 1.2 watts with an input power of 300 milliwatts, a power-added efficiency greater than 15 percent, and a linearity sufficient to support Gaussian minimum shift keying (GMSK), quadrature phase shift keying (QPSK), 8-phase shift keying (PSK), 16-quadrature amplitude modulation (QAM), filtered symmetric differential phase-shift keying (FSDPSK), differential QPSK (DQPSK), and 8- differential PSK (DPSK) modulation modes over an operating temperature range from -40 to +80 ¢XC. Radiation goals of a total dose of 300 K rad (Si) and single event latchup immunity greater than 90 MeV/mg/cm2 will be met. In addition gains of up to 25 dB, which is significantly greater than the minimum gain specified, can be designed and implemented with the 3-D microstructure approach to be used in this SBIR program. The 3-D microfabrication and 3-D microstructures approach to be developed and used in this SBIR program is applicable to power amplifiers from below 20 GHz to over 80 GHz.