Bimetallic Precursors for Chemical Vapor Deposition

Period of Performance: 09/21/1993 - 09/21/1995

$553K

Phase 2 SBIR

Recipient Firm

Advanced Technology Materials, Inc.
Danbury, CT 06810
Principal Investigator

Research Topics

Abstract

Metalorganic chemical vapor deposition (MOCVD) is the most widely accepted manufacturing technique for electronic quality thin films due to its inherent control over film composition, purity, conformality, uniformity and deposition rate. Thin film technology for ferroelectric material such as lead titanate and lead zirconate titanate (PZT) is in great demand due to many applications in pyroelectric and optoelectronic devices. In Phase I of this program, unprecedented heterobimetalic lead-titanium and lead-zirconium precursors were synthesized, characterized and established as promising MOCVD sources by virtue of their physical properties and composition control during deposition. Due to the imposed 1:1 stoichiometry of lead to Group IVB metal, these compounds provide control over film composition at a molecular level. In contrast, MOCVD using commercially available precursors is very sensitive to process variables, which translates to poorly controlled elemental stoichiometry, compromising the electronic properties of the thin film. In Phase II we will ecaluate three different classes of bimetallic precursors, optimize their physical properties, develop scale-up procedures, establish their superiorty for the deposition of thin films and demonstrate a prototype device from the films. In Phase III we will partner with two major semiconductor manufacturers to move the source reagent and CVD technology developed in Phase II into commercial device fabrication processes.