A Novel Approach to High Power Density Packaging for High Temperature SiC Power Modules

Period of Performance: 11/14/2003 - 11/15/2005


Phase 2 SBIR

Recipient Firm

United Silicon Carbide, Inc.
7 Deer Park Drive Suite E
Monmouth Junction, NJ 08852
Principal Investigator


In response to Army SBIR Topic No. A02-232, we propose to develop a novel approach to package high power density SiC devices for high temperature operations. The proposed approach is aimed at achieving (i) substantially higher heat rejection, (ii) drastically simplified packaging technology, (iii) greatly improved reliability for high temperature operations, and (iv) low cost so that it cab find numerous dual-use applications. In Phase I, we clearly demonstrated the feasibility of the approach. In Phase II, we propose to substantially improve the technology, including further increased heat rejection, higher ambient operating temperatures, and increased voltage and power ratings. These substantial improvements to the technology will be achieved through the design, fabrication and demonstration of a series of packaged SiC power rectifiers and switches suitable for high temperature operations. Computer modeling will be carried out to assist the design of the key components. The fabricated key component will be characterized and tested under different temperatures. The packages developed under Phase II will be capable of handling power dissipations up to a factor of 10X better than state-of-the-art and suitable for operations at ambient temperatures up to 200C or higher. Because of the simplicity and low cost of the proposed packaging technology, if demonstrated successfully, it should also find widespread applications for Si power devices.