Breakthrough Technology for Repair of CCD Image Sensors

Period of Performance: 09/30/1997 - 09/30/1999


Phase 2 SBIR

Recipient Firm

Silicon Mountain Design, Inc.
5055 Corporate Plaza Drive,, Suite 100
Colorado Springs, CO 80919
Principal Investigator

Research Topics


The need for higher-resolution imager chips at low cost has become more acute for DoD and commercial industry as image processing and optical systems improve. However, imager chips of even moderate size typically have many individual pixel defects, while large image sensors are fabricated with difficulty, at low yield, very high cost, and a large number of "dead pixels". It is exceptionally difficult to manufacture large CCD arrays (e.g., 2048 x 2048 pixel imagers and larger) without defects caused by wafer imperfections, cleanroom contamination, stress related defects in surface coatings, imperfect photoresist processing, and other sources of imager defects. The technology of this proposal - to make "perfect, defect-free imagers" from imagers with a variety of random and unique point, column and/or cluster defects -is a potentially revolutionary yield/cost breakthrough.