Magneto-Thermal MRAM

Period of Performance: 11/07/2003 - 10/30/2005


Phase 2 SBIR

Recipient Firm

NVE Corp. (formerly Nonvolatile Electron
11409 Valley View Rd.
Eden Prairie, MN 55441
Principal Investigator


Magneto-Thermal MRAM uses both heat and magnetic field (current)to overcome thermal instabilities of very small memory cells. Self-generated heat in the cell raises the temperature of magnetic material in the cell above the exchange ordering temperature of the magnetic material (either ferromagnetic or anti-ferromagnetic). Magneto-Thermal MRAM is compatible with advances in photolithography down to 0.05 micron to provide nonvolatile random access memory at DRAM densities. Because there is no irreversible change in lattice or phase during writing, no write fatigue is anticipated. The proposed work will concentrate on materials and process developments to demonstrate reliability and cell performance compatible with read and write speeds of approximately 50 ns and a realistic chip capacity of 1 gigabit are expected using 0.1 micron lithography. A small, working memory array and a conceptual design (compatible with demonstration array data) will show that Magneto-Thermal MRAM can provide high density nonvolatile memory at least through the next decade.