Simulation Design Fabrication and Testing of a Single Crystal...

Period of Performance: 01/01/1989 - 12/31/1989

$450K

Phase 2 SBIR

Recipient Firm

Scientific Research Assoc., Inc.
P. O. Box 1058, 30C Hebron Avenue
Glastonbury, CT 06033
Principal Investigator

Abstract

SEMICONDUCTING DIAMOND FIELD EFFECT TRANSISTORS (FET) ARE NEARLY IDEAL FOR HIGH SPEED, HIGH POWER, HIGH TEMPERATURE, RADIATION RESISTANT DEVICES. THIS PROGRAM WILL BUILD AND TEST SUCH A DEVICE, BY GROWING A SINGLE CRYSTAL P-DOPED DIAMOND PROCESSED INTO POWER FETs. THE RESULTANT DEVICE WILL BE CHARACTERIZED THROUGH A SERIES OF ELECTRICAL MEASUREMENTS. A MANUFACTURING METHODOLOGY WILL ALSO BE INVESTIGATED, LEADING TO DEVELOPMENT OF A COMMERCIAL PRODUCT. DIAMOND FETs WILL HAVE EXTENSIVE APPLICATIONS IN THE ELECTRONICS AND COMMUNICATIONS INDUSTRIES, AND WILL BE PARTICULARLY VALUABLE WHERE POWER, TEMPERATURE, AND RADIANT MAY POSE A THREAT. COMMERCIAL AND MILITARY SATELLITES ARE PRIME USERS OF SUCH DEVICES.