Semiconductor Microbolometer Room Temperature Infrared Detectors

Period of Performance: 01/17/2003 - 01/17/2005

$730K

Phase 2 SBIR

Recipient Firm

ITN Energy Systems, Inc.
8130 Shaffer Parkway Array
Littleton, CO 80127
Principal Investigator

Abstract

ITN Energy Systems, Inc. proposes the development of microbolometer room temperature infrared detectors using plasma enhanced chemical vapor deposition (PECVD) growth of silicon germanium alloys. This Phase II contract will see the demonstration of PECVD deposited semiconductors with improved properties for microbolometer applications, especially reduced 1/f noise. ITN will team with a microbolometer manufacturer for the fabrication of microbolometer arrays directly on CMOS read out integrated circuits, thereby providing a solid demonstration of the improved properties. The major goal of the proposed work is the development of room temperature detector arrays for the 8-12 micron wavelength band. Fully packaged and tested focal plane arrays will be delivered to the Army at the end of this contract.Affordable room temperature infrared detector arrays will have wide applicability in military night vision systems, as well as enabling wide spread civilian applications such as automotive night driving aids, security monitoring, and fire fighting.