Development of an Advanced High Yield Cost Effective SiC Process Technology for Manufacturing a New Class of SiC Power Devices

Period of Performance: 09/24/2001 - 12/31/2003

$750K

Phase 2 SBIR

Recipient Firm

United Silicon Carbide, Inc.
7 Deer Park Drive Suite E
Monmouth Junction, NJ 08852
Principal Investigator

Abstract

We propose to improve and fully develop the innovative cost-effective SiC process technology demonstrated in Phase I to fabricate and commercialize a novel SiC vertical JFET (VJFET) whose feasibility has been firmly demonstrated in Phase I. The innovative process technology and the novel SiC VJFET device structure will make it possible (I) to reduce the high power dissipation of SiC devices from the order of 1E3 W/sq.cm to less than 200W/sq.cm, (II) to dramatically improve SiC power device reliability when operating at high temperatures, (III) to allow SiC power switches be fabricated for operations at temperatures of 300 C and above, (IV) to manufacture SiC power VJFET switches, and (V) to reduce the costs of the SiC power devices due to the greatly improved process yield. In Phase II we will optimize the device structure by computer modeling, fully develop the process technology to fabricate VJFETs with 50% reduction in cell size, and drastically increase the power level of SiC VJFETs for high temperature (250-300C), high frequency (30-50Hz) and high power (35-45 HP) SiC inverter demonstration.