Micropower Microdot CMOS APS Image Sensor

Period of Performance: 09/09/1998 - 12/11/2000


Phase 2 SBIR

Recipient Firm

Photobit Corp.
135 N. Los Robles Avenue, 7th Floor
Pasadena, CA 91101
Principal Investigator


The problem to be addressed in this work is the development of a micropower microdot CMOS active pixel image sensor that dissipates two orders of magnitude less power than the current state of the art CMOS APS and occupy only a few square millimeters in area. The miniature micropower camera-on-a-chip would require such a low power level that it could be powered from a watch battery for a year or even by a light beam. In Phase I, several key blocks to achieve the micropower microdot sensor have been invented and simulated. A strawman sensor design with an intrinsic power dissipation level of 40 uW was developed. In Phase II, a prototype version of the micropower microdot imager will be designed, fabricated and tested. The first chip will have extra facilities and optimizing the principle blocks. The results of the first run will be summarized to design a product-grated miniature sensor the second stage of the chip development effort. this advanced miniature sensor will have just 3-4 external pads. A micro-module camera supplied with a microlens will be assembled and displayed at DARPA to demonstrate the opportunities of the new micropower microdot image sensor technology.