Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

Period of Performance: 05/01/1998 - 05/01/2000


Phase 2 SBIR

Recipient Firm

Witech (widegap Technology)
827 State Street, #15
Santa Barbara, CA 93101
Principal Investigator

Research Topics


WideGap Technology (WiTech) proposes to develop native oxide based electronics in The project will continue the development of E-D (Enhancement-Depletion) logic based IC technology and a high performance, high efficiency microwave power technology.Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the proliferation of wireless communications, a huge market has opened up for efficient, low power, high speed electronics. This demand can be met by ultra low power dissipation, high speed Enhancement-Depletion mode III-V compound Semiconductor FET technology. Moreover, there are stringent demands on the efficiency and linearity of the transistor amplifiers for wireless applications. For an FET technology to meet the above requirements, it is necessary to completely eliminate gate and substrate leakage currents. We will continue the use of wet-oxide of alxGa1-xAs as a gate insulator and buffer insulator to enable this new GaAs based electronics family.