InGaAs / InP Based Multi-level Photonic Modules for Millimeter Wave Phased Array Antennas

Period of Performance: 03/18/1999 - 03/19/2001


Phase 2 SBIR

Recipient Firm

Discovery Semiconductors, Inc.
Ewing, NJ 08628
Principal Investigator

Research Topics


The goal of the proposed development is the development of multi-level photonic modules for phased array antennas. The module will be comprised of a monolithic InGaAs/InP p-i-n photodetector - p-HEMT power amplifier, 0pto-electronic integrated circuit (OEIC), that has 44 GHz bandwidth and output power of 50 mW integrated with a planar antenna. The photodetector will have a high quantum efficiency 1,30%) and will be front-illuminated, thereby improving optical performance. The proposed innovation will greatly simplify the implementation of miniaturized optically controlled antenna elements. Monolithically integrating the photoreceiver and power amplifier into one OBIC device, with an integrated antenna element into a single multi-level package will significantly reduce system costs. The overall element would be small, rugged, and hermetic, allowing for conformal mounting onto vehicle structures and other such applications. Dr. Arthur Paolella of Lockheed Martin's Communication & Power Center will consult. BENEFITS: Optical signal distribution for phased array antennas in communication satellites is advantageous to system designers. By distributing the microwave and millimeter wave signals optically, a potential savings of up to 100 lbs. can be achieved. This weight savings translates into reduced launch costs of $1.5 to $3.0M per satellite.