Radiation and Electromagnetic Pulse Hardened Silicon Carbide Based Electronics

Period of Performance: 12/07/1989 - 12/07/1991


Phase 2 SBIR

Recipient Firm

Cree Research, Inc.
4600 Silicon Drive
Durham, NC 27703
Principal Investigator


A variety of alpha silicon carbide (6H-SiC) diodes have been made and tested for resistance to gamma radiation and electromagnetic pulse (EMP). Preliminary tests indicate that SiC diodes have much greater resistance to these effects than traditional Si diodes. This project is continuing to build and test other SiC devices, such as metal-semiconductor field-effect tansistors (MESFET) and SiC junction devices, for development in both commercial and military products. These radiation resistant devices operate in high-power, high-temperature environments, making these highly suitable for space based electronics as well as terrestrial nuclear power system electronics. A host of telecommuncations system applications for SiC devices will be made possible by commercial development of this technology, at costs approximately those of conventional semiconductor devices.