Source for Metalorganic Molecular Beam Epitaxy

Period of Performance: 08/07/1989 - 12/31/1991


Phase 2 SBIR

Recipient Firm

Advanced Technology Materials, Inc.
Danbury, CT 06810
Principal Investigator


The metalorganic molecular beam epitaxy (MOMBE) process is being developed as a highly effective technique for the preparation of semiconducting thin films. One limiting feature of the technique is the effectiveness and safety of the reagents used in this process. A unique aluminum reagent and a novel arsenic delivery system has been developed which addresses these issues in the formation of certain high performance semiconductors. The arsenic delivery system, which delivers arsine gas on demand from a solid precursor, also has broad potential for use in conventional semiconductor processes through elimination of the inventorying of large quantities of hazardous gas. When used in MOMBE, these techniques are expected to permit increased yield, higher productivity and enhanced safety while minimizing the cost of process gases and their containment. Improved semiconductors will have applications in electronic devices, communications, and computers.