Flexible Electronics for Rugged, Low Power Army Systems

Period of Performance: 11/08/2006 - 10/31/2007

$120K

Phase 1 SBIR

Recipient Firm

Versatilis LLC
488 Ridgefield Rd
Shelburne, VT 05482
Principal Investigator

Abstract

Performance of current amorphous (A-Si) and even polycrystalline (Poly-Si) silicon thin film transistors (TFTs) made with low temperature processes ( 300°C on rigid glass or metal foil substrates with acceptable performance and yield, this is too high for traditional plastic substrates. Versatilis proposes to show high performing top gate based TFTs made of Zinc Oxide (ZnO) as an alternate semiconductor material, and made directly on a flexible polymer sheet at