Group IV Photoemmisive Layer Fabrication for High Reliability Infrared Sensors

Period of Performance: 09/05/1996 - 09/05/1997


Phase 2 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Research Topics


An advanced ultra-high vacuum (UHV) deposition system will be implemented for fabrication of group IV photoemissive materials for high performance long wavelength infrared (8-12 um) focal plane applications. The system will incorporate the innovative concepts developed in the Phase I program, including in situ preceision process sensing and computer control, epi-ready surface preparation station, upgradability for gas sources and cluster tool-like sample transport, and particulate reduction techniques. The system design will address critical issues for the fabrication of such device structures. The new system will achieve a base pressure of 5E-11 Torr, be capable of reproducible high precision control of thickness, composition and growth temperature, and attaining a very high doping level (e.g. boron p+-spike). The system will be versatile and flexible to accommodate differences in the fabrication requirements of various devices. Such a system will be suitable for next generation low cost production of high performance DOD and commercial SiGeC electronics as well.