Effects of Long-Term Storage on Electronic Devices

Period of Performance: 07/23/1993 - 07/22/1995

$388K

Phase 2 SBIR

Recipient Firm

Pecht Assoc., Inc.
4407 BEECHWOOD RD.
Hyattsville, MD 20782
Principal Investigator

Research Topics

Abstract

The Phase II effort involves the implementation of the failure mechanism models identified in Phase I, into software. The software provides the user with the capability to evaluate microelectronic reliability in terms of average time to failure under various storage environments. Input to the software includes geometric and material characteristics of teh devices. Each potential failure mechanism will be analyzed and ranked so that the dominant failure mechanisms will be highlighted. Teh results of thereliability analysis can then be used to assess long term storage reliability, to develop tests and screens, and to point out design improvements.