Real Time, Self-directed MBE Flux Control Incorporating In situ Ellipsometry

Period of Performance: 03/30/1993 - 03/30/1995

$742K

Phase 2 SBIR

Recipient Firm

Technology Assessment & Transfer, Inc.
133 Defense Highway, Suite 212 Array
Annapolis, MD 21401
Principal Investigator

Research Topics

Abstract

The objective of the proposed program is to achieve fully automated control over electronic, electro-optic and microwave thin film devices grown by molecular beam epitaxy (MBE). The MBE control system will comprise two feedback loops: a process control loop incorporating auto-leaning coapabilities and compensation for shutter opening transients; a materials properites control loop comprising a spectroscopic ellipsometer as the sensor. Both loops will cooperate through computer controlled growth supervision to produce repatable films in accordance with a recipe film sequence established by the user. The devices used to demonstrate this MBE control system will be based on films of AlxGa1-xAs on InP, and other growth processes, such as MOCVD. Recipes for specific devices already have been supplied by a national laboratory. They will fabricate devices from these films and will evaluate their performance. During Phase III, the control technolgoy will be made available to chip fabricators and epi-toll houses. To expedite this transfer, TA&T will from a wholly owned subsidiary that will provide control software, set up new MBE/ellipsometry control systems, retrofit existing systems, and advise during acquisition of accessory equipment and subsystems.