A Process Model and Complementary Experiments for the Electron Cyclotron Resona

Period of Performance: 05/30/1993 - 03/13/1995

$495K

Phase 2 SBIR

Recipient Firm

Scientific Research Assoc., Inc.
P. O. Box 1058, 30C Hebron Avenue
Glastonbury, CT 06033
Principal Investigator

Research Topics

Abstract

This proposal describes a research program to develop electron cyclotron resonance (ECR) technology suitable for use in device fabrication. specific processes to be addressed are ECR deposition and tetching. ECR is receiving much attention as a processing technique. It has the potential to deposit dielectric films at low temperatures with desirable characteristics. Operating at sub-millitorr pressures, ECR etching has the potential to etch extremely fine feature sizes in device fabrication. As the technology is at its early stages, a thorough understancing is needed to make the technique viable in device fabrication which is the goal of this program The objective of this program is to be achieved through a combination of deposition and etchnic process development,e valuaiton of deposited film characterists, residual etch damage characterization, surface chemistry, plasma diagnostics and process modeling. Primary candidate processes are deposition of dielectrics (ex: silicon nitride) and fine feature III-V compounds etching. The anticipated results include deposition and etching process viable for use in device fabrication and a user-friendly software which would be a design tool.