Low Temperature Fabrication of High Quality Tc Superconducting Thin Films by Plasma Enhanced MOCVD Process

Period of Performance: 09/30/1991 - 09/30/1993


Phase 2 SBIR

Recipient Firm

Emcore Corp.
394 Elizabeth Ave.
Somerset, NJ 08873
Principal Investigator


The development of a technqiue for the low temperature, in-situ formation of high Tc superconducting thin films is crucial for the practical application of high Tc superconductors. The success of plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) has been successfully demonstrated in Phase I. We will systematically optimize this state-of-the-art process for the fabrication morphology of the films. Multilayer high Tc superconducting devices will also be fabricated in Phase II. The PE-MOCVD process will permit deposition of high quality, untwinned high Tc superconducting films with a smooth surface and high density, on a variety of substrates. The process also promises to deposit the orthorhombic superconducting phase in the as-deposited state, avoiding the phase transition which exists in all of other processes. The novel PE-MOCVD process, which substitutes electron kinetic energy for conventional thermal energy and enhances coupound formation with the presence of activated oxygen generated from dissociation of N2O, will be further developed through the use of higher microwave power resulting in low temperature temperature disposition, non-equilibrium film compositions, and high product pruity. In addition, CVD process offer the additional advantages of being applicable to inexpensive and large scale fabrication.