Growth Apparatus for Microwave Plasma Deposition

Period of Performance: 09/05/1991 - 05/05/1993

$498K

Phase 2 SBIR

Recipient Firm

Emcore Corp.
394 Elizabeth Ave.
Somerset, NJ 08873
Principal Investigator

Abstract

The technique of low temperature formation of diamond-like and refractory thin films using plasma-assisted chemical vapor deposition (PA-CVD) is crucial for many DoD applications. The development of such a process will permit deposition of high quality, low contamination, refractory films on a variety of substrates. The PA-CVD process offers the potential advantages of low cost large scale fabrication. THe proposed system incorporates a resistance heated, high speed rotating-disk susceptor in a vertical, cylindrical cold-wall growth chamber. The specially designed resistnace heater will decouple the temperature gradient caused by the plasma plume. The high speed rotating disc will largely improve the uniformity of the films. A downstream plasma design is adopted in the system to minimize contamination. The system is designed to have the capabilities of: depositing with O(2) addition; depositing diamond in a microwave plasma pulsing mode; and the capability for controlled B-doping. In addition, provisions have been made for the future additions of oxide and/or nitride film deposition capability. Research into using the Atomic Layer Epitaxy (ALE) method for growth of diamond will also be possible. The design is based on successful results demonstrated at EMCORE by depositing thin films of the superconducting ceramic oxide, YBaCuO, using microwave PA-CVD. Both an advanced PA-CVD system and associated materials processing technologies will be developed in this program.