NUMERICAL SIMULATION OF MAGNETIC LEC GROWTH OF GaAs

Period of Performance: 06/30/1989 - 06/30/1991

$483K

Phase 2 SBIR

Recipient Firm

Scientific Research Assoc., Inc.
P. O. Box 1058, 30C Hebron Avenue
Glastonbury, CT 06033
Principal Investigator

Abstract

THIS DOCUMENT DESCRIBES A PROPOSED PHASE II SBIR PROGRAM FOR PERFORMING NUMERICAL STUDIES WITH REALISTIC PARAMETERS, OF LIQUID ENCAPSULATED CZOCHRALSKI (LEC) GaAs CRYSTAL GROWTH. THE PROPOSED PROGRAM HAS THREE BROAD OBJECTIVES: i) CONTINUE DEVELOPMENT OF A ROBUST 3-D TRANSIENT ALGORITHM TO UNDERSTAND THE PHYSICS OF HEAT TRANSFER, AND HYDRODYNAMIC CHARACTERISTICS OF THE LEC GROWTH SYSTEM IN THE PRESENCE AND ABSENCE OF A MAGNETIC FIELD, ii) INCORPORATE AND TEST EFFECTS OF DETAILED GROWTH ELEMENTS ON GaAs GROWTH, iii) PROVIDE OPTIMUM GROWTH CONDITIONS FOR REPRODUCIBLE GROWTH OF LARGE-DIAMETER, HIGH-QUALITY GaAs SINGLE CRYSTALS. THE EQUATIONS TO BE SOLVED IN THIS STUDY INCLUDE: i) CONSERVATION EQUATIONS FOR THE MASS, MOMENTUM AND ENERGY, SPECIES AND MAGNETIC INDUCTION EQUATION IN THE MELT PHASE, ii) ENERGY BALANCE AND THERMAL STRESS EQUATIONS IN THE CRYSTAL, iii) CONSERVATION FOR THE MASS, MOMENTUM AND ENERGY IN THE LIQUID ENCAPSULANT, iv) HEAT CONDUCTION EQUATIONS IN THE CRUCIBLE SUSCEPTOR AND PBN LAYERS. IN ADDITION, THE SHAPES OF THE MELT-CRYSTAL, MELT-LIQUID AND LIQUID-GAS INTERFACES, AND CRYSTAL-GAS SURFACE WILL ALSO BE DETERMINED ALONG WITH THE SOLUTIONS. NUMERICAL SIMULATIONS WILL ALSO INCLUDE THE VOLUME CHANGE OF THE MELT PHASE, AND NONUNIFORM GROWTH (CRYSTAL DIAMETER VARIATIONS).