Advanced SiC MOSFET for Automotive Applications

Period of Performance: 06/12/2017 - 03/11/2018

$150K

Phase 1 SBIR

Recipient Firm

Global Power Technologies Group
20692 Prism Place Array
Lake Forest, CA 92630
Firm POC
Principal Investigator

Abstract

Advances in silicon carbide (SiC) MOSFETs promise to revolutionize power electronics, including for transportation. Adoption of SiC power devices in electric vehicle drives is hindered by high cost and unproven reliability in vehicle applications. Fabrication of low on-resistance, high performance SiC DMOSFETs including integrated current sense on 150 mm wafers using an area-efficient design will reduce device cost and improve system robustness, speeding adoption of this exciting new technology. Silicon carbide semiconductor devices are predicted to become a $1B industry by 2023. Adoption of a new technology requires technical capability, competitive price and confidence in reliability. Improved control strategies using the integrated current sense feature will improve confidence in silicon carbide technology and accelerate adoption of SiC devices.