Characterization Iii-v Compounds/ultrastructured Materials Using Sputter Initiated Resonance Ionization Spectroscopy With High

Period of Performance: 01/01/1987 - 12/31/1987

$488K

Phase 2 SBIR

Recipient Firm

Atom Sciences, Inc.
ATOM SCIENCES, INC., 114 RIDGEWAY CTR
Oak Ridge, TN 37830
Principal Investigator

Abstract

THE AIR FORCE IS INTERESTED IN MULTILAYERED, HETEROEPITAXIAL ULTRASTRUCTURES FOR USE IN SEMICONDUCTOR DEVICES AND AS STRUCTURAL MATERIALS. TAILOR-MADE BAND GAPS FOR SUCH DEVICES AS LASERS AND HIGH-ELECTRON-MOBILITY TRANSISTORS CAN BE PRODUCED BY GROWING III-V COMPOUNDS EPITAXIALLY IN MANY THIN LAYERS OF DIFFERENT COMPOSITION (QUANTUM-WELL LAYERING). OTHER LAYERED STRUCTURES CAN BE USED AS HIGH-STRENGTH AND/OR SUPERREFRACTORY MATERIALS FOR AIRPLANE COMPONENTS. HOWEVER, OBTAINING THE ULTIMATE PERFORMANCE FROM SUCH ULTRASTRUCTURES REQUIRES CONTROL OF THE LOCAL COMPOSITION OF THE LAYERS OVER DEPTHS PERTINENT TO QUANTUM WELL LAYERING, 100 TO 1000 A. THIS REQUIRES, IN TURN, AN ANALYTICAL TECHNIQUE SUPERIOR TO ANY NOW AVAILABLE, ONE HAVING HIGH LATERAL AND DEPTH RESOLUTION, AND GOOD SENSITIVITY INDEPENDENT OF MATRIX EFFECTS IN THE DIFFERENT MATERIALS OF THE LAYERS. A PHASE I SBIR FEASIBILITY STUDY SHOWED THAT SPUTTER INITIATED RESONANCE IONIZATION SPECTROSCOPY (SIRIS), A NEW LASER BASED TECHNIQUE, COULD MAKE MATRIX-INDEPENDENT, INTERFERENCE-FREE, HIGHLY SENSITIVE MEASUREMENTS OF ELEMENTS OF INTEREST WITH HIGH LATERAL AND DEPTH RESOLUTION. THIS PHASE II SBIR PROJECT PROPOSES TO IMPROVE THE SIRIS APPARATUS TO ACHIEVE ppm SENSITIVITY WITH 1000 A LATERAL RESOLUTION AND TO DEMONSTRATE IT IN ULTRASTRUCTURE MATERIALS OF STRATEGIC IMPORTANCE TO THE AIR FORCE.