Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics

Period of Performance: 07/11/2016 - 05/10/2017


Phase 1 STTR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Firm POC
Principal Investigator

Research Institution

Research Triangle Institute
3040 Cornwallis
Research Triangle Pk, NC 27709
Institution POC


High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to Si), which suggests this material is well-suited for power device applications. Kyma Technologies proposes to design a deposition system capable of growing monoclinic beta-polytype Ga2O3, and n-type and p-type layers. The deposition rates will be > 4 um/hr; this lends itself to halide vapor phase epitaxy (HVPE), and has already been successfully accomplished elsewhere. This work will build on Kymas extensive experience designing, building and deploying HVPE for GaN and AlN.