High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to Si), which suggests this material is well-suited for power device applications. Kyma Technologies proposes to design a deposition system capable of growing monoclinic beta-polytype Ga2O3, and n-type and p-type layers. The deposition rates will be > 4 um/hr; this lends itself to halide vapor phase epitaxy (HVPE), and has already been successfully accomplished elsewhere. This work will build on Kymas extensive experience designing, building and deploying HVPE for GaN and AlN.
