A New MOCVD Platform for Commercially Scalable Growth of-Ga2O3 Device Structures

Period of Performance: 07/11/2016 - 05/10/2017

$80K

Phase 1 STTR

Recipient Firm

Agnitron Technology Inc.
6595 Edenvale Blvd Array
Eden Prairie, MN 55346
Principal Investigator

Research Institution

University of California, Santa Barbara
Office of Research
Santa Barbara, CA 93106
Institution POC

Abstract

Future DoD and Navy missions require advances in current high voltage power electronics technology as existing technology and even recent promising advances in Silicon Carbide and Gallium Nitride based materials lack fundamental material properties to deliver switching capabilities needed for future high power converter applications, advanced radar and propulsion systems. Much interest has been recently directed towards the wide bandgap oxide semiconductor -Ga2O3 for potential application in these areas as it exhibits extraordinary material properties potentially suiting it for high voltage applications due to its ability to withstand very large electric fields. In this program a team of world renowned MOCVD and oxide semiconductor experts have been assembled to provide a comprehensive analysis through modeling, simulation and experimentation of the unique process for epitaxial growth of -Ga2O3 by MOCVD with the intent to refine and outline techniques for offering comprehensive p- and n-type doping control as well as high quality crystal growth rates of 2-4+ microns/hr.