All-Silicon Carbide power module based boost converter platform for grid-tied energy storage applications

Period of Performance: 06/08/2015 - 03/07/2016


Phase 1 SBIR

Recipient Firm

Genesic Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Firm POC, Principal Investigator


This project will create a new category of advanced all-Silicon Carbide power inverters for use in energy storage in the medium-voltage range and > 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in thermal management requirements over the existing Silicon power inverters will eliminate significant waste of electric energy in large power converters, resulting in huge energy savings for the United States, while accelerating the adoption of renewable energy generation like solar and wind power systems. At the end of Phase II of this proposed SBIR program, 400kW will be constructed using recently commercialized monolithic SiC MIDSJT devices, SiC Thyristors and ultra-high voltage SiC Diodes rated at 15 kV. These power inverters will deliver unprecedented improvements in efficiency, and thermal management requirements to the electrical storage and electricity delivery infrastructure of the United States. During Phase I, the focus will be on developing device and circuit simulation models using robust power modules. The goal at the end of Phase I is to optimize the circuit and device suite for fabricating power inverters with the 400 kW ratings, in Phase II of this program. The 400 kW all-SiC power inverters to be developed in this program will significantly improve the performance and decrease the size/weight/footprint of 12.47 kV energy storage grid-tied inverters, FACTS-based devices, and power system switchgear. Industrial applications such as electrostatic precipitators, and oil drilling equipment. This in turn will increase market acceptance of these high-end products and thereby drive skilled-labor jobs creation in the US.