GaN Substrate Technology

Period of Performance: 01/01/2014 - 12/31/2014

$1.5MM

Phase 2 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator
Firm POC

Abstract

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic device performance. Kyma will select the highest quality GaN seeds and use their proprietary hydride vapor phase epitaxy (HVPE) growth process to rapidly grow the seeds into boules while maintaining high crystal structural quality and purity. If successful, Kyma will produce low-cost, high-performing boules needed for power semiconductor manufacturing.