Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

Period of Performance: 02/28/2014 - 02/26/2016

$900K

Phase 2 STTR

Recipient Firm

Sinmat, Inc.
1912 NW 67th Place Array
Gainesville, FL 32653
Firm POC
Principal Investigator

Research Institution

University of Florida
339 Weil Hall
Gainsville, FL 32611
Institution POC

Abstract

Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. In Phase I effort, we successfully demonstrated a polishing process to significantly reduce surface roughness (