Low Power Monolayer MoS2 Transistors for RF Applications

Period of Performance: 08/28/2014 - 02/22/2015

$150K

Phase 1 STTR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Firm POC
Principal Investigator

Research Institution

Pennsylvania State University
110 Technology Center Building
University Park, PA 16802
Institution POC

Abstract

Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4 in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of MoS2-based RF FETs. Utilizing a novel and optimized source/drain contact approach, the targeted performance of these FETs is to achieve ft and fmax > 5 GHz, while handling a DC power > 10 µW and an RF power output > 1.0 µW.