High-Voltage Intelligent Power Distribution Solution

Period of Performance: 07/11/2014 - 07/31/2016

$741K

Phase 2 SBIR

Recipient Firm

Global Embedded Technologies, Inc.
2390 Freway Park Drive
Farmington Hills, MI 48335
Principal Investigator

Abstract

Silicon Carbide (SiC) semiconductors are enabling technologies which bring significant benefits to power distribution equipment for next generation ground vehicles. The high temperature performance and high temperature low on-resistance properties of SiC MOSFETs facilitate the realization of reliable electrical power systems. High voltage power distribution is an application particularly well suited for SiC in that its current density is eight times higher than competing silicon devices, resulting in more compact power system design elements. To take advantage of the high temperature capabilities of SiC, packaging and cooling methods must be developed to gain higher power density without sacrificing reliability. The proposed High Voltage Power Distribution Unit (HVPDU) will combine intelligent power control electronics from Global ET, industry leading SiC devices from GE, and advanced thermal management. The HVPDU will be a modular, smart, and high temperature capable, high voltage power distribution unit which can be rapidly integrated in military ground vehicle systems to enable high voltage DC electrical power distribution required for vehicle modernization programs and new vehicle platforms.