64MB+ Radiation-Hardened, Non-Volatile Memory for Space

Period of Performance: 09/23/2014 - 03/30/2015


Phase 1 SBIR

Recipient Firm

Tezzaron Semiconductor Corp.
1415 Bond Street Array
Naperville, IL 60563
Principal Investigator

Research Topics


ABSTRACT: ReRAM has made significant progress over the last few years and is ready for development by early adopters. Tezzaron proposes to create a multilayer 3D assembled ReRAM memory device using Rambus ReRAM technology and Honeywell RH wafers. The phase II target device will be radiation hardened, low power, non-volatile and have a density in excess of 512Mbits. BENEFIT: A ReRAM device offers great advantages over other current non-volatile radiation hardened devices. The ReRAM has fast read and write with low power. The low write currents scale with technology making the ReRAM a viable choice for current and future semiconductor technology nodes. The ReRAM memory cell is virtually unaffected by radiation making it a good choice for space applications. These same attributes also make the targeted device valuable for a large number of applications in aviation and automotive fields.