High-Power, Continuous-Wave 3.0- to 3.5-Micron Emitting Quantum Cascade Semiconductor Laser

Period of Performance: 07/09/2014 - 04/09/2015

$200K

Phase 2 STTR

Recipient Firm

Intraband LLC
200 N. Prospect Ave. Array
Madison, WI 53726
Principal Investigator
Firm POC

Research Institution

University of Wisconsin, Madison
2100 Main Street
Madison, WI 53706
Institution POC

Abstract

The technical objective of this proposal is to demonstrate a Quantum Cascade Laser (QCL) emitting in the 3.0-3.5 µm wavelength region, which employs a metamorphic buffer layer (MBL). It is the goal of this program to develop a QCL single-stripe device which will operate in a single, diffraction-limited lobe under room temperature continuous-wave (CW) operation to moderately high (~ 0.5 W) output powers. The use of the MBL allows for a lower-strain QCL active-region design compared with conventional approaches which employ InP substrates. Advanced conduction-band-engineered QC lasers will be used, since they allow virtual suppression of carrier leakage out of the devices active regions, resulting in electro-optical characteristics much less temperature sensitive than for conventional QCL devices; and thus allowing for significant increases in average power and CW wallplug efficiency.