Direct Growth/fusion Circuitry Devices on Optical Fiber

Period of Performance: 01/01/1988 - 12/31/1988

$488K

Phase 2 SBIR

Recipient Firm

Advanced Fiberoptics Corp.
7650 E Evans Rd
Scottsdale, AZ 85260
Principal Investigator

Research Topics

Abstract

DIRECT DEPOSITION OF COMPOUND SEMICONDUCTOR GaAs FILM INTO A SILICA OR SAPPHIRE GLASS HAS BEEN STUDIED TO BE A POTENTIAL TECHNIQUE IN FABRICATING OPTO CIRCUITRY DEVICES ON OPTICAL FIBER IN PHASE I. IN THIS PHASE II, AFC PROPOSES AN INTENSIVE RESEARCH OF HOW TO GROW IIIV EPITAXY FIL ON GLASS SUBSTRATE USING MBE (MOLECULAR BEAM EPITAXY) WITH SURFACE LASER ANNEALING TECHNIQUE, AND ICBT (ION CLUSTERED BEAM TECHNOLOGY), AND MOVPE (METAL-ORGANO VAPOR PHASE EPITAXY) TECHNIQUES. MECHANICAL, ELECTRICAL AND OPTICAL PROPERTIES WILL BE ANALYZED AND CHARACTERIZED WITH EVERY AVAILABLE TECHNIQUE. SIMPLE STRUCTURE OPTO-DEVICES WILL BE FABRICATED AND TESTED. THE FINAL GOAL OF THIS PROJECT IS TO FULLY INTEGRATE OPTO CIRCUITRY FOR HIGH SPEED OPTO-PROCESSING AND COMMUNICATION.