Development of a Single Crystal Titanium Carbide Growth Process

Period of Performance: 02/26/1991 - 02/26/1993

$499K

Phase 2 SBIR

Recipient Firm

Inrad, Inc.
181 Legrand Avenue
Northvale, NJ 07647
Principal Investigator

Research Topics

Abstract

A PHASE II PROGRAM IS PROPOSED TO DEVELOP A CZOCHRALSKI CRYSTAL GROWTH PROCESS FOR TiC CAPABLE OF PRODUCING 30 mm DIAMETER BOULES. THE PROGRAM COMPRISES EXPLORATORY CRYSTAL GROWTH, DESIGN AND CONSTRUCTION OF A LARGE CRYSTAL GROWTH STATION, OPTIMIZATION OF THE CRYSTAL GROWTH PARAMETERS, DEVELOPMENT OF TiC CRYSTAL FABRICATION AND POLISHING TECHNIQUES AND EXTENSIVE CHARACTERIZATION OF CRYSTAL WAFERS. POLISHED TiC WAFERS 35 mm IN DIAMETER AND 0.5 mm THICK WILL BE DELIVERED TO THE NAVAL WEAPONS CENTER FOR USE AS SUBSTRATES FOR THE EPITAXIAL DEPOSITION OF B-SiC.