High-Performance Semiconductor Lasers With Narrow Line-Width, Low RIN And High Power

Period of Performance: 05/13/2014 - 11/17/2014

$80K

Phase 1 SBIR

Recipient Firm

APIC Corporation
5800 Uplander Way
Culver City, CA 90230
Principal Investigator

Abstract

We propose to develop high-performance 1550 nm semiconductor lasers with linewidth less than 1 kHz, output power greater than 100 mW, RIN below -175 dBc/Hz. We will use InGaAlAs system instead of the InGaAsP system as the laser active layer, and will design the optimum laser structure to reduce the laser threshold current and RIN, and to push the relaxation oscillation peak over 40 GHz. We will use optical feedback or electrical feedback to reduce laser linewidth to 1 kHz. The applicants have many year experiences in the design and fabrication of semiconductor lasers with low RIN, high power, and narrow linedwidth. Our facilities are good enough to complete the fabrications and tests of the lasers.