High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors

Period of Performance: 06/11/2007 - 06/10/2009

$1MM

Phase 2 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator

Abstract

Kyma Technologies proposes a research and development effort to fabricate and test GaN-based FETs on GaN and SiC substrates. AlGaN/GaN HEMT structures will be tested to identify the impact of defects on the thermal characteristics and degradation behavior in the devices in order to improve device performance and reliability. Thermal models of GaN-based FETs on GaN substrates with comparisons to SiC substrate-based devices will be used along with micro-Raman thermal measurements of FET structures to identify critical factors in improving the efficiency and reliability of GaN-based FETs for radar and RF sensors. At the end of Phase II an improved understanding of the thermal and defect mechanisms influencing the performance of high frequency GaN FETs will have been developed.