Manufacturing Process for Semi-insulating 4” Diameter GaN Substrates

Period of Performance: 08/06/2007 - 08/06/2009


Phase 2 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator


The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.