Advanced Sensor Materials for Space

Period of Performance: 06/22/2007 - 04/01/2010


Phase 2 SBIR

Recipient Firm

Galaxy Compound Semiconductors, Inc.
9922 E. Montgomery #7
Spokane, WA 99206
Principal Investigator


Advanced technology and circuit architecture is under investigation for high performance, infra-red, and low power electronics. GaSb substrates have advantages that are attractive for implementation of very long wavelength infrared (VLWIR) detectors with higher operating temperatures for spaced based and stealth applications. A significant aspect inhibiting widespread commercial application of GaSb wafers for VLWIR is the lack of transparency beyond 15 Ým. Due to antisite and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type which strongly absorbs VLWIR wavelengths. Even for low n-type GaSb substrates, the substrate requires backside thinning for IR transparency. In Phase I, ultra-low n-type GaSb substrates (n