High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Period of Performance: 02/10/2014 - 02/10/2016


Phase 2 SBIR

Recipient Firm

Sundew Technologies, LLC
340 Industrial Lane Unit 7
Broomfield, CO -
Principal Investigator


This project targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective of this project is to provide a higher dielectric constant substitution for currently used dielectric layers, as well as to integrate high work-function metal electrodes and 3D capacitor design. The project intends to develop MIM capacitors with leakage current 200 V operation voltage, 500 pF/mm2 capacitance density and >107 hours MTTF at 50 V and 125 deg C operation temperature.