High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Period of Performance: 10/03/2006 - 10/03/2007

$749K

Phase 2 STTR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Research Institution

University of Illinois, Urbana-Champaign
600 S Mathews
Urbana, IL 61801
Institution POC

Abstract

This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)