Materials Development in GaN for Non-polar Substrates Sliced From Bulk Crystals

Period of Performance: 09/11/2007 - 09/09/2008


Phase 2 STTR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator
Firm POC

Research Institution

North Carolina State University
Campus Box 7514
Raleigh, NC 27695
Institution POC


Kyma Technologies will team with North Carolina State University to develop growth techniques using the hydride vapor phase epitaxy technique to fabricate large area non-polar GaN substrates. Using high quality non-polar seed crystals developed during the Phase I effort, the HVPE growth process will be optimized to increase the GaN crystal size and result in large area substrates. Kyma will perform the crystal growth and materials characterization; North Carolina State University will perform MOCVD growth and materials characterization, in addition to developing a growth model relating Kyma's physical-chemical growth parameters to atomic growth phenomena.