Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

Period of Performance: 07/01/2013 - 04/30/2014

$77.9K

Phase 1 STTR

Recipient Firm

MiMoCloud
11531 Swains Lock Terrace
Potomac, MD 20854
Principal Investigator, Firm POC

Research Institution

University of California, Santa Barbara
Office of Research
Santa Barbara, CA 93106
Institution POC

Abstract

This research seeks to develop a method of developing solid-state power amplifiers that operate at 300 Volts, achieve 100 Watt output and greater than 90% efficiency at 1 GHz with 10% bandwidths. We will seek to demonstrate switch-mode amplifiers that use a novel gate design with Gallium Nitride forming the basis for solid state power amplification.