Low Pressure Source for Mass-Selective, Diffusion Assisted Epitaxy

Period of Performance: 05/25/2004 - 05/25/2006

$500K

Phase 2 STTR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Research Institution

University of Minnesota
450 McNamara Alumni Center
Minneapolis, MN 55455
Institution POC

Abstract

Epitaxial growth of non-equilibrium thin-film structures, which have high quality and abrupt interfaces, is still the main challenge that limits many material systems for applications in semiconductor devices. In this STTR Phase II program, SVT Associates (SVTA) in collaboration with the University of Minnesota (UMN) will develop a new RF plasma light-mass ion source, compatible with the low-pressure requirements of molecular beam epitaxy (MBE). This source will allow selective enhancement of the motion of surface atoms during thin film growth. Ion-enhanced MBE growth techniques will be used at SVTA and UMN to achieve high-quality growth of challenging material systems such as high-indium-content III-nitride films and novel high-temperature oxides. These are technologically important materials with broad applications in high frequency and high-power electronics, UV photodetectors and emitters, and MEMs and high-temperature device packaging.