Low Energy/Low Noise Electronic Component for Mobile Platform Applications

Period of Performance: 01/01/1998 - 12/31/1999


Phase 2 STTR

Recipient Firm

Polyfet RF Devices
1110 Avenida Acaso
Camarillo, CA 93012
Firm POC
Principal Investigator

Research Institution

Board of Trustees of the University of Illinois
109 Coble Hall
Champaign, IL 61820
Institution POC

Research Topics


The main objective of this proposal is to develop low-cost high-efficiency integrated 40V RF power lateral double-diffused MOSFETS (LDMOSFETs) on silicon-on insulator (SOI) material. In Phase I project, we prototyped Polyfet RF Device's 80V LDMOSFETs on bulk silicon substrates using advanced numerical two-dimensional (2D) finite-element semiconductor process and device simulators and showed excellent agreement between measured and simulated dc and RF parameters. This infrastructure was then used to develop a number of 40V LDMOSFET designs, both on bulk silicon and SOI material, and identify optimum device structures suitable for further development in Phase II. Our Phase I research has shown that SOI LDMOSFETs promise significant improvemements in gain, noise figure, efficiency, and manufacturing cost compared to bulk devices. These results are highly promising and provide the impetus for further investigation and development. We propose to demonstrate fully characterized packaged prototype devices in Phase II based on double-level metal/salicide technology. We will also critically address several fundamental issues including the effects of self-heating, gate resistance and high-field carrier transport on RF performance and reliability. We will perform statistical process control (SPC) studies and determine the manufacturability of the newly developed technology. Polyfet RF Devices will commercialize this technology. BENEFITS: Next generation computing, communication, automotive, information processing, and medical electronics applications require one-chip power generation and distribution at very high frequencies. Among the most desirable attributes are: low-power, high-frequency, high-efficiency - all at very low manufacturing costs. Wireless communication and portable computing are two major emerging civilian and military applications that demand ultra low power high-efficiency microelectronics technologies.