Predictive Modeling/Control for Intersubband and Interband Quantum Devices Grown by MBE

Period of Performance: 10/04/2006 - 10/04/2008

$375K

Phase 2 STTR

Recipient Firm

Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd.
Richardson, TX 75081
Principal Investigator
Firm POC

Research Institution

University of Texas at Dallas
800 West Campbell Road
Richardson, TX 75080
Institution POC

Abstract

This Phase II STTR effort will demonstrate intersubband and interband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU optical cavity software packages. The software model will predict fabricated device characteristics based on data inputs from real-time in-situ growth monitoring and post-growth epi materials characterization. The Quantum device modeling will be applied to epi materials grown by Molecular Beam Epitaxy (MBE), such as QWIP, Quantum Cascade Laser, diode laser, and VSCEL. BandProf quantum device modeling based on Thomas-Fermi approach will be utilized to calculate the intersubband and interband states. Cross correlation between model and device parameters will be performed for both GaAs and InP materials systems to develop a more accurate materials parameter database. Real-time growth adjustment utilizing in-situ sensor data and growth-to-device modeling to improve epi materials growth process for complex epi device structure such as QWIP will be demonstrated.