High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Period of Performance: 06/05/2012 - 12/05/2012


Phase 1 SBIR

Recipient Firm

Sundew Technologies, LLC
340 Industrial Lane Unit 7
Broomfield, CO -
Principal Investigator


This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.