Advanced Opto-Electronic Devices Fabricated by E-Beam Generated Phase Masks

Period of Performance: 01/15/1996 - 12/31/1996


Phase 2 STTR

Recipient Firm

Sdl, Inc.
80 Rose Orchard Way
San Jose, CA 95134
Firm POC
Principal Investigator

Research Institution

Jet Propulsion Laboratory
4800 Oak Grove Drive
La Cañada Flintridge, CA 91011
Institution POC

Research Topics


SDL proposes to collaborate with JPL a new generation of optoelectronic devices using e-beam generated phase-mask fabrication technology. This new technique allows Bragg gratings with arbitrary orientation, curvature, pitch and distributed phase-shifts to be manufactured at low-cost in volume quantity. During Phase I, a cooperation between SDL's development group and JPL's e-beam lithography team resulted in the demonstration of uniform pitch e-beam written phase masks with sufficient diffraction efficiency for grating printing, thereby validating the proposed concept. Phase II will attain the full potential of the e-beam phase mask technique by introducing phase shifts and pitch variations, and use it to fabricate a quarter-wave shifted, multi-wavelength DFB laser array in a manufacturing testbed. This component is a critical part of future high-bit rate fiber communication link, but is not yet available because of a lack of reasonable fabrication technique. This Phase II effort will overcome that difficulty and bring low-cost, high-speed telecommunication WDM devices to the market.