SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Period of Performance: 01/01/2010 - 12/31/2010


Phase 1 SBIR

Recipient Firm

Fairfield Crystal Technology, LLC
8 South End Plaza
New Milford, CT 06776
Principal Investigator


This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices.